Nanoscale semiconductor Pb_1―xSn_xSe (x = 0.2) thin films synthesized by electrochemical atomic layer depositionSHAOXIONG LIN; XIN ZHANG; XUEZHAO SHI et al.Applied surface science. 2011, Vol 257, Num 13, pp 5803-5807, issn 0169-4332, 5 p.Article

Energy spectrum and the nature of irradiation-induced defects in Pb1-xSnxSe alloys with inverse band structureSKIPETROV, E. P; KOVALEV, B. B; SKIPETROVA, L. A et al.Semiconductor science and technology. 1998, Vol 13, Num 10, pp 1134-1139, issn 0268-1242Article

Pb1-xSnxSe substitutional solid solutions prepared by coprecipitation from aqueous solutionsMARKOV, V. M; MASKAEVA, L. N; LOSHKAREVA, L. D et al.Inorganic materials. 1997, Vol 33, Num 6, pp 555-557, issn 0020-1685Article

Properties of epitaxial Pb_1-xSn_xSe on CaF₂ covered Si(111) substratesMÜLLER, P; FACH, A; JOHN, J et al.Applied surface science. 1996, Vol 102, pp 130-133, issn 0169-4332Conference Paper

Investigation of the composition of vapour-grown Pb_1-xSn_xSe crystal (x≤0.4) by means of lattice parameter measurementsSZCZERBAKOW, A; BERGER, H.Journal of crystal growth. 1994, Vol 139, Num 1-2, pp 172-178, issn 0022-0248Article

Parameters of defect states in Pb1-xSnxSe (x ≤ 0.03) alloys irradiated with electronsSKIPETROV, E. P; CHERNOVA, N. A; KOVALEV, B. B et al.Semiconductor science and technology. 1998, Vol 13, Num 6, pp 557-562, issn 0268-1242Article

Material properties of Pb_1-xSn_xSe epilayers on Si and their correlation with the performance of infrared photodiodesFACH, A; JOHN, J; MÜLLER, P et al.Journal of electronic materials. 1997, Vol 26, Num 7, pp 873-877, issn 0361-5235Conference Paper

Optical properties of Pb_1-xSn_xSe thin layers grown by HWECHARAR, S; OBADI, A; FAU, C et al.International journal of infrared and millimeter waves. 1996, Vol 17, Num 2, pp 365-374, issn 0195-9271Article

Study of vacancy defects in PbSe and Pb_1-xSn_xSe by positron annihilationPOLITY, A; KRAUSE-REHBERG, R; ZLOMANOV, V et al.Journal of crystal growth. 1993, Vol 131, Num 1-2, pp 271-274, issn 0022-0248Article

Hydrochemical synthesis, structure, semiconductor properties of films of substitutional Pb1―xSnxSe solid solutionsMARKOV, V. F; TRETYAKOVA, N. A; MASKAEVA, L. N et al.Thin solid films. 2012, Vol 520, Num 16, pp 5227-5231, issn 0040-6090, 5 p.Article

Photovoltaic IV-VI on silicon infrared devices for thermal imaging applicationsZOGG, H.SPIE proceedings series. 1999, pp 52-62, isbn 0-8194-3099-4Conference Paper

The Pb-Sn-Se system : Phase equilibria and reactions in the PbSe-SnSe-Se subternaryDAL CORSO, S; LIAUTARD, B; TEDENAC, J. C et al.Journal of phase equilibria. 1995, Vol 16, Num 4, pp 308-314, issn 1054-9714Article

IR-sensor array fabrication in Pb_1-xSn_xSe-on-Si heterostructuresJOHN, J; FACH, A; MASEK, J et al.Applied surface science. 1996, Vol 102, pp 346-349, issn 0169-4332Conference Paper

Contribution à l'étude de systèmes ternaires de chalcogénures de plomb en vue de leur utilisation pour la détection infrarouge. Approche thermodynamique et caractérisation des matériaux = Contribution to the study of lead chalcogenides ternary systems for their use in IR detection. Thermodynamic approach and characterization of materialsDal Corso, Sylvie; Tedenac, J.-C.1994, 196 p.Thesis

Radiation defect band in Pb1-XSnXSe(x≤0.03) alloys irradiated with electronsSKIPETROV, E. P; ZVEREVA, E. A; KOVALEV, B. B et al.SPIE proceedings series. 1999, pp 348-352, isbn 0-8194-3491-4Conference Paper

Photovoltaic IV-VI on Si infrared sensor arrays for thermal imaging : Optics in Switzerland. I: Federal institutes of technologyZOGG, H; FACH, A; JOHN, J et al.Optical engineering (Bellingham. Print). 1995, Vol 34, Num 7, pp 1964-1969, issn 0091-3286Article

Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCTELIZONDO, S. L; ZHAO, F; KAR, J et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1411-1414, issn 0361-5235, 4 p.Conference Paper

Photovoltaic IV-VI on silicon infrared devices for thermal imaging applicationsZOGG, H; ALCHALABI, K; TIWARI, A. N et al.SPIE proceedings series. 2000, pp 51-56, isbn 0-8194-3601-1Conference Paper

Epitaxial lead-chalcogenide on silicon layers for thermal imaging applicationsZOGG, H.SPIE proceedings series. 1999, pp 22-26, isbn 0-8194-3491-4Conference Paper